- Research

Chunming Yin
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Department:
Research Group(s):
Role(s):
Education:
- BSc Nanjing University, China
- PhD Peking Uinversity, China
Research Interests:
1. Single atom spectroscopy
With the recently developed photoionisation spectroscopy [C. Yin et al., Nature, 497, 91 (2013)], we can study the defect centres in solids on a single atom level. This project focuses on the site symmetry, electronic dynamics, level repulsion, and state mixing of a single atom in silicon.
2. Optical control and on-chip cavity coupling of single atoms
A single spin of a single atom is a good candidates for qubit, a basic component in a future quantum computer. The current challenge is to couple multiple spins over macroscopic scales. Optical control and on-chip cavity coupling provide a promising solution to this problem. The first milestone has been achieved by showing optical addressing of single spins in silicon .
3. Spin polarised photocurrent in strong spin-orbit coupling materials
Spin-orbit coupling plays a key role in spintronics, which aims to combine both the spin and charge properties of electrons and to produce more powerful electronic devices. Chunming has studied strong spin-orbit coupling materials and contributes to the band-structure design of spintronic devices, detection of spin-polarised current at room temperature, gate-tuning of spin splitting, etc. [C. Yin et al., Nano Letters, 13, 2024 (2013)].
Selected Publications:
- Yu J;Zeng X;Zhang L;Yin C;Chen Y;Liu Y;Cheng S;Lai Y;He K;Xue Q, 2018, 'Inverse spin Hall effect induced by linearly polarized light in the topological insulator Bi2Se3', Optics Express, vol. 26, pp. 4832 - 4841, http://dx.doi.org/10.1364/OE.26.004832
- Yu J;Zeng X;Zhang L;He K;Cheng S;Lai Y;Huang W;Chen Y;Yin C;Xue Q, 2017, 'Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi2Se3', Nano Letters, vol. 17, pp. 7878 - 7885, http://dx.doi.org/10.1021/acs.nanolett.7b04172
- Fernandez-Gonzalvo X;Chen YH;Yin C;Rogge S;Longdell JJ, 2015, 'Coherent frequency up-conversion of microwaves to the optical telecommunications band in an Er:YSO crystal', Physical Review A - Atomic, Molecular, and Optical Physics, vol. 92, http://dx.doi.org/10.1103/PhysRevA.92.062313
- Yin C;Yuan H;Wang X;Liu S;Zhang S;Tang N;Xu F;Chen Z;Shimotani H;Iwasa Y;Chen Y;Ge W;Shen B, 2013, 'Tunable surface electron spin splitting with electric double-layer transistors based on InN.', Nano Lett, vol. 13, pp. 2024 - 2029, http://dx.doi.org/10.1021/nl400153p
- Yin C;Rancic M;De Boo GG;Stavrias N;McCallum JC;Sellars MJ;Rogge S, 2013, 'Optical addressing of an individual erbium ion in silicon', Nature, vol. 497, pp. 91 - 94, http://dx.doi.org/10.1038/nature12081
- Peng XY;Zhang Q;Shen B;Shi JR;Yin CM;He XW;Xu FJ;Wang XQ;Tang N;Jiang CY;Chen YH;Chang K, 2011, 'Anomalous linear photogalvanic effect observed in a GaN-based two-dimensional electron gas', PHYSICAL REVIEW B, vol. 84, http://dx.doi.org/10.1103/PhysRevB.84.075341
- Yin CM;Tang N;Zhang S;Duan JX;Xu FJ;Song J;Mei FH;Wang XQ;Shen B;Chen YH;Yu JL;Ma H, 2011, 'Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures', APPLIED PHYSICS LETTERS, vol. 98, http://dx.doi.org/10.1063/1.3569948
- Yin C;Shen B;Zhang Q;Xu F;Tang N;Cen L;Wang X;Chen Y;Yu J, 2010, 'Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain', APPLIED PHYSICS LETTERS, vol. 97, http://dx.doi.org/10.1063/1.3511768
- Zhang Q;Wang XQ;Yin CM;Xu FJ;Tang N;Shen B;Chen YH;Chang K;Ge WK;Ishitani Y;Yoshikawa A, 2010, 'Strong circular photogalvanic effect in ZnO epitaxial films', APPLIED PHYSICS LETTERS, vol. 97, http://dx.doi.org/10.1063/1.3467835
- Zhang Q;Wang XQ;He XW;Yin CM;Xu FJ;Shen B;Chen YH;Wang ZG;Ishitani Y;Yoshikawa A, 2009, 'Lattice polarity detection of InN by circular photogalvanic effect', APPLIED PHYSICS LETTERS, vol. 95, http://dx.doi.org/10.1063/1.3186042
- He XW;Shen B;Chen YH;Zhang Q;Han K;Yin CM;Tang N;Xu FJ;Tang CG;Yang ZJ;Qin ZX;Zhang GY;Wang ZG, 2008, 'Anomalous photogalvanic effect of circularly polarized light incident on the two-dimensional electron gas in Al(x)Ga(1-x)N/GaN heterostructures at room temperature', PHYSICAL REVIEW LETTERS, vol. 101, http://dx.doi.org/10.1103/PhysRevLett.101.147402