• Research
Staff Record
Photo of Chunming Yin

Chunming Yin


+61 2 938 55591


Research Group(s): 




  • BSc Nanjing University, China
  • PhD Peking Uinversity, China

Research Interests: 

1. Single atom spectroscopy
With the recently developed photoionisation spectroscopy [C. Yin et al., Nature, 497, 91 (2013)], we can study the defect centres in solids on a single atom level. This project focuses on the site symmetry, electronic dynamics, level repulsion, and state mixing of a single atom in silicon.

2. Optical control and on-chip cavity coupling of single atoms
A single spin of a single atom is a good candidates for qubit, a basic component in a future quantum computer. The current challenge is to couple multiple spins over macroscopic scales. Optical control and on-chip cavity coupling provide a promising solution to this problem. The first milestone has been achieved by showing optical addressing of single spins in silicon .

3. Spin polarised photocurrent in strong spin-orbit coupling materials
Spin-orbit coupling plays a key role in spintronics, which aims to combine both the spin and charge properties of electrons and to produce more powerful electronic devices. Chunming has studied strong spin-orbit coupling materials and contributes to the band-structure design of spintronic devices, detection of spin-polarised current at room temperature, gate-tuning of spin splitting, etc. [C. Yin et al., Nano Letters, 13, 2024 (2013)].

Selected Publications: 

  1. Fernandez-Gonzalvo X; Chen YH; Yin C; Rogge S; Longdell JJ, 2015, 'Coherent frequency up-conversion of microwaves to the optical telecommunications band in an Er:YSO crystal', Physical Review A: Atomic, Molecular and Optical Physics, vol. 92, no. 6, http://dx.doi.org/10.1103/PhysRevA.92.062313
  2. Yin C; Rancic M; de Boo GG; Stavrias N; McCallum JC; Sellars MJ; Rogge S, 2013, 'Optical addressing of an individual erbium ion in silicon.', Nature, vol. 497, no. 7447, pp. 91 - 94, http://dx.doi.org/10.1038/nature12081
  3. Yin C; Yuan H; Wang X; Liu S; Zhang S; Tang N; Xu F; Chen Z; Shimotani H; Iwasa Y; Chen Y; Ge W; Shen B, 2013, 'Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN', Nano Letters: a journal dedicated to nanoscience and nanotechnology, vol. 13, no. 5, pp. 2024 - 2029, http://dx.doi.org/10.1021/nl400153p
  4. Yin CM; Tang N; Zhang S; Duan JX; Xu FJ; Song J; Mei FH; Wang XQ; Shen B; Chen YH; Yu JL; Ma H, 2011, 'Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures', Applied Physics Letters, vol. 98, no. 12, pp. 122104 - 122104, http://dx.doi.org/10.1063/1.3569948
  5. Peng XY; Zhang Q; Shen B; Shi JR; Yin CM; He XW; Xu FJ; Wang XQ; Tang N; Jiang CY; Chen YH; Chang K, 2011, 'Anomalous linear photogalvanic effect observed in a GaN-based two-dimensional electron gas', Physical Review B: Condensed Matter and Materials Physics, vol. 84, no. 7, http://dx.doi.org/10.1103/PhysRevB.84.075341

  6. Zhang Q; Wang XQ; Yin CM; Xu FJ; Tang N; Shen B; Chen YH; Chang K; Ge WK; Ishitani Y; Yoshikawa A, 2010, 'Strong circular photogalvanic effect in ZnO epitaxial films', Applied Physics Letters, vol. 97, no. 4, pp. 041907 - 041907, http://dx.doi.org/10.1063/1.3467835

  7. Yin C; Shen B; Zhang Q; Xu F; Tang N; Cen L; Wang X; Chen Y; Yu J, 2010, 'Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain', Applied Physics Letters, vol. 97, no. 18, pp. 181904 - 181904, http://dx.doi.org/10.1063/1.3511768

  8. He X; Shen B; Chen Y; Zhang Q; Han K; Yin C; Tang N; Xu F; Tang C; Yang Z; Qin Z; Zhang G; Wang Z, 2008, 'Anomalous Photogalvanic Effect of Circularly Polarized Light Incident on the Two-Dimensional Electron Gas in AlxGa1-xN/GaN Heterostructures at Room Temperature', Physical Review Letters, vol. 101, no. 14, http://dx.doi.org/10.1103/PhysRevLett.101.147402

  9. Rogge S; Sellars MJ; Yin C; McCallum JC; De Boo GG; Rancic M; Stavrias N, 2014, Optical addressing of individual targets in solids, Patent No. WO/2014/089621, Patent Agent:FB RICE & CO